Raman spectroscopy has proven to be one of the most effective tools for characterization of semiconductor properties and for manufacturing process/quality control because materials such as Si, SiGe, InGaAs, GaAs, GaN, and graphene exhibit precise, distinct Raman bands. Applied in a microscopic approach, the Raman technique has been successfully implemented to determine microstructure composition on thin-films, strain in the multilayer device, and to identify defects across the wafer surface.